LANTHANUM-NITRIDE/SILICON SUPERLATTICE INFRARED DETECTOR BY MOCVD

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 15706
Amount: $63,261.00
Phase: Phase I
Program: SBIR
Awards Year: 1991
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Patriots Park, Bedford, MA, 01730
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Anton C Greenwald Phd
 Principal Investigator
 (617) 275-6000
Business Contact
Phone: () -
Research Institution
N/A
Abstract
LANTHANUM NITRIDE IS A SEMI-METAL WITH A BANDGAP OF 40MRY AND A CRYSTAL LATTICE PARAMETER CLOSE TO THAT OF SILICON. IT HAS BEEN SUGGESTED THAT A SUPERLATTICE OF LAN AND SI CAN BE FASHIONED WITH AN EFFECTIVE GAP OF 0.1 EV, SUITABLE FOR LONG WAVELENGTH INFRARED DETECTION. IN PHASE I, SPIRE WILL ATTEMPT TO DEPOSIT LAN EPITAXIALLY ON SILICON BY LOW PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION, AND MEASURE ITS ELECTRICAL PROPERTIES. LAN HAS NEVER BEEN DEPOSITED BEFORE BY CVD. THIS RESEARCH IS NOW POSSIBLE THROUGH THE DEVELOPMENT OF NEW SOURCE CHEMICALS RELATED TO STUDIES OF HIGH TEMPERATURE SUPERCONDUCTORS. FABRICATION OF A SUPERLATTICE STRUCTURE WOULD BE ATTEMPTED IN PHASE II.

* Information listed above is at the time of submission. *

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