PSEUDOMORPHIC HEMTS FOR MILLIMETER WAVE COMMUNICATIONS

Award Information
Agency:
National Aeronautics and Space Administration
Branch:
N/A
Amount:
$486,412.00
Award Year:
1992
Program:
SBIR
Phase:
Phase II
Contract:
N/A
Agency Tracking Number:
17123
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Spire Corp.
Patriots Pk, Bedford, MA, 01730
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
N/A
Principal Investigator
 () -
Business Contact
Phone: () -
Research Institution
N/A
Abstract
ADVANCES IN SCIENTIFIC INSTRUMENTATION USED IN DEEP-SPACE MISSIONS HAVE GENERATED A NEED FOR HIGH DATA-TRANSMISSION RATES TO EARTH. IT MAY BE ECONOMICALLY FEASIBLE TO USE THE KA BAND (27-40 GHZ) FOR UP- AND DOWN-LINKING; THUS DEVELOPMENT OF MONOLITHIC MICROWAVE INTEGRATED-CIRCUIT PHASED ARRAY DISTRIBUTION SYSTEMS FOR MILLIMETER WAVELENGTHS IS DEMANDED. THE PSEUDOMORPHIC, HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT) IS UNEQUIVOCALLY THE BEST CANDIDATE FOR HIGH-POWER, HIGH-EFFICIENCY APPLICATIONS FROM 10-100 GHZ. ITS SUPERIOR LOW-NOISE PERFORMANCE PROVIDES THE OPPORTUNITY FOR INTEGRATION OF BOTH HIGH-POWER AND LOW-NOISE DEVICES ON THE SAME CHIP WITHOUT COMPROMISING THE PERFORMANCE OF EITHER COMPONENT. THE INNOVATION EXPLORED IN THIS PROJECT IS AN INVERTED, DOUBLE, HETEROJUNCTION HEMT WITH PULSE-DOPED DONOR AND PSEUDOMORPHIC CHANNEL LAYERS TO BE GROWN BY MOCVD, THE DEPOSITION TECHNIQUE OF CHOICE FOR HIGH-QUALITY PRODUCTION CAPABILITY. THE PHASE I PROJECT WILL DEMONSTRATE FEASIBILITY OF CONCEPT; PHASE II WILL RESULT IN AN OPTIMIZED STRUCTURE SUITABLE FOR PRODUCTION. ADVANCES IN SCIENTIFIC INSTRUMENTATION USED IN DEEP-SPACE MISSIONS HAVE GENERATED A NEED FOR HIGH DATA-TRANSMISSION RATES TO EARTH. IT MAY BE ECONOMICALLY FEASIBLE TO USE THE KA BAND (27-40 GHZ) FOR UP- AND DOWN-LINKING; THUS DEVELOPMENT OF MONOLITHIC MICROWAVE INTEGRATED-CIRCUIT PHASED ARRAY DISTRIBUTION SYSTEMS FOR MILLIMETER WAVELENGTHS IS DEMANDED. THE PSEUDOMORPHIC, HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT) IS UNEQUIVOCALLY THE BEST CANDIDATE FOR HIGH-POWER, HIGH-EFFICIENCY APPLICATIONS FROM 10-100 GHZ. ITS SUPERIOR LOW-NOISE PERFORMANCE PROVIDES THE OPPORTUNITY FOR INTEGRATION OF BOTH HIGH-POWER AND LOW-NOISE DEVICES ON THE SAME CHIP WITHOUT COMPROMISING THE PERFORMANCE OF EITHER COMPONENT. THE INNOVATION EXPLORED IN THIS PROJECT IS AN INVERTED, DOUBLE, HETEROJUNCTION HEMT WITH PULSE-DOPED DONOR AND PSEUDOMORPHIC CHANNEL LAYERS TO BE GROWN BY MOCVD, THE DEPOSITION TECHNIQUE OF CHOICE FOR HIGH-QUALITY PRODUCTION CAPABILITY. THE PHASE I PROJECT WILL DEMONSTRATE FEASIBILITY OF CONCEPT; PHASE II WILL RESULT IN AN OPTIMIZED STRUCTURE SUITABLE FOR PRODUCTION.

* information listed above is at the time of submission.

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