Growth of Boron Phosphide for High Temperature Electronic Devices

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$49,023.00
Award Year:
1992
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
18049
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Spire Corp.
One Patriots Park, Bedford, MA, 01730
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Stanley Vernon
(617) 275-6000
Business Contact:
() -
Research Institution:
n/a
Abstract
Invent a material good for transistors running at 2000 degrees Fahrenheit and the world will beat a path to your door. That's what the Spire Corporation hopes wil happen; Spire proposes to take advantage of boron phosphide's potential as a high-temperature, wide-bandgap electronic material. Thin-film boron phosphide isn't easy to grow; the Japanese have been trying for years. Spire thinks the answer is low-pressure chemical vapor deposition. Low pressure will keep gas molecules far enough apart to stop "snow" from forming but will still permit rapid crystal growth, important because 300 micron thick free-standing wafers are the program's goal. Always looking to the marketplace, Spire sees itself as becoming the first on-shore supplier of crystalline boron phosphide.

* information listed above is at the time of submission.

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