GaAs-Ge Alloys for Optical Processing at 1.3-1.5 microns

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$50,458.00
Award Year:
1992
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
18093
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Spire Corp.
One Patriots Park, Bedford, MA, 01730
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Stanley Vernon
(617) 275-6000
Business Contact:
() -
Research Institution:
n/a
Abstract
Fast electronics talking to optical circuits built right on the same chip are everybody's goal; problem is, it's not so easy to get there with infrared optics. Spire proposes a clever way around this, doubly clever because it's based on well known materials and methods combined in new ways. Starting with GaAs, an excellent choice for high-speed electronics but an infrared dead-head, by mixing in a little Ge, Spire will create a new alloy which is optically alive and fits perfectly on GaAs substrates. Infrared emitters and detectors can be built in the alloy, fast electronics in the GaAs. If this works, Spire argues, it's lower cost and higher reliability will knock existing infrared technologies right out of the market for fiber optic communications.

* information listed above is at the time of submission.

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