Ion Doped Quantum Well Lasers

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$300,000.00
Award Year:
1993
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
18025
Agency Tracking Number:
18025
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
One Patriots Park, Bedford, MA, 01730
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Anton C. Greenwald, Phd
(617) 275-6000
Business Contact:
() -
Research Institution:
n/a
Abstract
Diode lasers are great, but not temperature stable. Keeping the frequency constant, essential for communications, requires exotic (read expensive) heavy cooling systems. Investigators at Spire think they have a better way: build a laser diode whose frequency is naturally stable, as in ionic lasers such as neodymium doped YAG. Spire reasons that adding erbium to the quantum well of conventional AlGaAs lasers will stabilize the output at 1548nm, up from the common 800 to 900nm range and well matched to fibers. Spire knows how to make quantum well lasers and offers them as a finished product. Addition of erbium doping is another matter. It requires discovering a source gas compatible with existing metalorganic chemical vapor deposition and learning how to use it. That's what this research program proposes to do.

* information listed above is at the time of submission.

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government