High Energy Density Capacitors

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 18026
Amount: $499,000.00
Phase: Phase II
Program: SBIR
Awards Year: 1993
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
One Patriots Park, Bedford, MA, 01730
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Anton C. Greenwald, Phd
 (617) 275-6000
Business Contact
Phone: () -
Research Institution
N/A
Abstract
A capacitor storing a thousand times more energy than is possible today is the carrot offered by this Spire Corporation proposal. To get there, Spire will exploit its ability to grow exotic thin-film dielectric layers by metalorganic chemical vapor deposition (MOCVD). Everything has to go just right, but if it does, large-area one-micron thick films with kilovolt holdoff will result; that's tens of millions of volts per centimeter! Spire claims MOCVD is eminently practical because, at 2 microns per minute, it will grow metallized, multilayer structures economically whereas other thin-film processes won't. Big weight savings on spaceborne platforms are foreseen. Since the energy stored in Spire-built ultra-capacitors will approach that of electrochemical systems, Spire's capacitors may even supplant batteries as high-power, short-term energy sources in aerospace and all-electric vehicles.

* Information listed above is at the time of submission. *

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