Design and Modeling of 2-5 um Quantum Confinement Lasers of InAs/GaInAs/InP

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: N/A
Agency Tracking Number: 19971
Amount: $50,000.00
Phase: Phase I
Program: SBIR
Awards Year: 1993
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Spire Corp.
One Patriots Park, Bedford, MA, 01730
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Kurt J. Linden, Ph.d.
 (617) 275-6000
Business Contact
Phone: () -
Research Institution
This program will model various laser structures with 1, 2, and 3-dimensional carrier confinement in the InAs/GaInAs/InP material system. The innovative choice of this system is based on the fact that it is relatively easy to grow. The GaInAs/InP system is widely used for fabricating 1.3 um and 1.55 um LEDs, lasers and detectors for tele-communication applications. The addition of an InAs strained layer is easily achieved, provides the device designer with great design freedom and leads to a structure which emits radiaiton in the 2-3 um spectral region at 300K. The only other III-V compound semiconductor material capable of emitting in the 2-3 um spectral region at 300K is the complez quaternary Sb-contraining GaInAsSb/AlGaAsSb/GaSb system, and because it is nto commonly used, miscibility gaps make it difficult to grow and requires GaSb substrates; these are not widely available and have a low melting temperature. In Phase I the optimum strained GaInAs/InP system will be identified. The in Phase II, actual growth of the InAs/GaInAs/InP epitaxial structures by the widely-used MOCVD technology will be carried out. Strained quantum well lasers will then be fabricated in a variety of 1, 2, and 3-dimensional confinement configurations. Such multi-dimensional confinement structures in these long-wavelength materials are expected ot exhibit improved 300K device characteristics because of reduced Auger recombination effects.

* information listed above is at the time of submission.

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