Advanced Monolithic GAAs CHBT Technology Development
Department of Defense
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One Patriots Park, Bedford, MA, 01730
Socially and Economically Disadvantaged:
Anton C Greenwald, Ph.d
AbstractErbium-arsenide is a metallic alloy with a crystal lattice parameter close to that of GaAs. If a superlattice of these materials can be fabricated, and if its electrical properties are similar to those of the superlattice of the metallic alloy HgTe and the semiconductor CdTe, then an ErAs/GaAs combination could be found with an effective bandgap of 0.1 eV, suitable or long wavelength infra-red detection. In Phase I Spire will attempt to deposit ErAs epitaxially on GaAs by low pressure metalorganic chemical vapor deposition (LP-MOCVD) and measure its electrical properties. ErAs has never been deposited before by CVD. This innovative research is possible now through the development of new source chemicals related to rare earth doping of semiconductors. Fabrication of a superlattice structure would be attempted in Phase II.
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