Advanced Monolithic GAAs CHBT Technology Development

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: N/A
Agency Tracking Number: 19881
Amount: $739,870.00
Phase: Phase II
Program: SBIR
Awards Year: 1995
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Spire Corp.
One Patriots Park, Bedford, MA, 01730
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Anton C Greenwald, Ph.d
 (617) 275-6000
Business Contact
Phone: () -
Research Institution
Erbium-arsenide is a metallic alloy with a crystal lattice parameter close to that of GaAs. If a superlattice of these materials can be fabricated, and if its electrical properties are similar to those of the superlattice of the metallic alloy HgTe and the semiconductor CdTe, then an ErAs/GaAs combination could be found with an effective bandgap of 0.1 eV, suitable or long wavelength infra-red detection. In Phase I Spire will attempt to deposit ErAs epitaxially on GaAs by low pressure metalorganic chemical vapor deposition (LP-MOCVD) and measure its electrical properties. ErAs has never been deposited before by CVD. This innovative research is possible now through the development of new source chemicals related to rare earth doping of semiconductors. Fabrication of a superlattice structure would be attempted in Phase II.

* information listed above is at the time of submission.

Agency Micro-sites

SBA logo
Department of Agriculture logo
Department of Commerce logo
Department of Defense logo
Department of Education logo
Department of Energy logo
Department of Health and Human Services logo
Department of Homeland Security logo
Department of Transportation logo
Environmental Protection Agency logo
National Aeronautics and Space Administration logo
National Science Foundation logo
US Flag An Official Website of the United States Government