DEPOSITION OF YTTRIUM STABILIZED ZIRCONIA ON SILICON TO FORM SILICON ON INSULATOR SUBSTRATES

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$50,000.00
Award Year:
1993
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
21711
Agency Tracking Number:
21711
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
1 Patriots Park, Bedford, MA, 01730
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Anton C Greenwald
(617) 275-6000
Business Contact:
() -
Research Institution:
n/a
Abstract
HETEROEPITAXIAL GROWTH OF YTTRIA STABILIZED ZIRCONIA (YSZ) ON SILICON, WHICH CAN BE USED FOR SILICON-ON-INSULATOR AND AS A SUBSTRATE FOR FERROELECTRIC AND HIGH TEMPERATURE SUPERCONDUCTING MATERIALS IS BEING DEMONSTRATED. BECAUSE IT OFFERS POTENTIAL IMPROVEMENTS IN THE QUALITY OF TODAY'S TECHNOLOGIES AT A FRACTION OF THE COST, ITS DEVELOPMENT COULD OVERCOME A MAJOR BARRIER TO WIDESPREAD USE OF SILICON-ON-INSULATOR SUBSTRATES. METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) IS USED TO DEPOSIT YSZ ON HYDROGEN-PASSIVATED SILICON. THE DEPOSITED FILMS ARE FULLY CHARACTERIZED FOR COMPOSITION, CRYSTAL STRUCTURE, AND ELECTRICAL PROPERTIES.

* information listed above is at the time of submission.

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