DEPOSITION OF YTTRIUM STABILIZED ZIRCONIA ON SILICON TO FORM SILICON ON INSULATOR SUBSTRATES

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: N/A
Agency Tracking Number: 21711
Amount: $50,000.00
Phase: Phase I
Program: SBIR
Awards Year: 1993
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Spire Corp.
1 Patriots Park, Bedford, MA, 01730
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Anton C Greenwald
 (617) 275-6000
Business Contact
Phone: () -
Research Institution
N/A
Abstract
HETEROEPITAXIAL GROWTH OF YTTRIA STABILIZED ZIRCONIA (YSZ) ON SILICON, WHICH CAN BE USED FOR SILICON-ON-INSULATOR AND AS A SUBSTRATE FOR FERROELECTRIC AND HIGH TEMPERATURE SUPERCONDUCTING MATERIALS IS BEING DEMONSTRATED. BECAUSE IT OFFERS POTENTIAL IMPROVEMENTS IN THE QUALITY OF TODAY'S TECHNOLOGIES AT A FRACTION OF THE COST, ITS DEVELOPMENT COULD OVERCOME A MAJOR BARRIER TO WIDESPREAD USE OF SILICON-ON-INSULATOR SUBSTRATES. METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) IS USED TO DEPOSIT YSZ ON HYDROGEN-PASSIVATED SILICON. THE DEPOSITED FILMS ARE FULLY CHARACTERIZED FOR COMPOSITION, CRYSTAL STRUCTURE, AND ELECTRICAL PROPERTIES.

* information listed above is at the time of submission.

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