MOCVD OF INT1SB FOR LONG-WAVELENGTH IR DETECTORS

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$61,185.00
Award Year:
1994
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
25561
Agency Tracking Number:
25561
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
One Patriots Park, Bedford, MA, 01730
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Nasser Karam, Phd
(617) 275-6000
Business Contact:
() -
Research Institution:
n/a
Abstract
Spire proposes to design and fabricate In(-1-x)Tl(-x)Sb long-wavelength (8 to 12 micrometers) infrared detectors. Theoretical calculations predict that InTlSb offers many potential advantages over HgCdTe and III-V quantum well infrared photodetectors (QWIP). Its higher mechanical strength and better compositional uniformity promise improved focal plane array performance and yield. Also, since it is lattice-matched to InSb, the substrate cost is lower than that of the CdZnTe in which HgCdTe is grown. In comparison to QWIP, InTlSb offers normal incidence detection and higher quantum efficiency. In(1-x)Tl(x)Sb with Tl compositions greater than 5% will be achieved by raising the cyclopentadienylthallium (CPTl) bubbler temperature to 150 degrees celcius and using a new Tl source, isopropylcyclopentadienylthallium, which has a higher vapor pressure than CPTI.

* information listed above is at the time of submission.

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