High Reliability Carbon-Doped GaAs Heterojunction Bipolar Transistors

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: N/A
Agency Tracking Number: 36681
Amount: $701,750.00
Phase: Phase II
Program: SBIR
Awards Year: 1997
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
One Patriots Park, Bedford, MA, 01730
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Pascale Gouker
 (617) 275-6000
Business Contact
Phone: () -
Research Institution
Because GaAs heterojunction biplor transistors (HBTs) are used in more and more integrated circuits, device stability and reliability are currently of major concern. HBT failure mechanisms are not yet well understood but potentially correlated with hydrogen contamination in the HBT base, with the strain induced in the base by high carbon concentrations, and with aluminum migration. The proposed work will develop metalorganic chemical vapor deposition growth processes to address these issues. In Phase I, we will implement a new high temperature carbon doping process for GaAs base with potential for reduced hydrogen contamination and improved junction quality. Results will be compared with conventional carbon doping techniques. We will also implement a new growth process to compensate lattice distortion in the base. Materials will be extensively characterized for their structural and electronic properties. GaAs HBT epitaxial wafers will be grown using the newly developed processes and wafers will be delivered for evaluation.

* Information listed above is at the time of submission. *

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