InAsSb Strain-Balanced Avalanche Photodiodes with 4-5 micron Cutoff Wavelength

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9550-04-C-0145
Agency Tracking Number: F045-021-0235
Amount: $99,906.00
Phase: Phase I
Program: STTR
Awards Year: 2004
Solicitation Year: 2004
Solicitation Topic Code: AF04-T021
Solicitation Number: N/A
Small Business Information
SPIRE CORP.
One Patriots Park, Bedford, MA, 01730
DUNS: 065137978
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Steven Wojtczuk
 Senior Scientist,
 (603) 595-8900
 swojtczuk@bandwidthsemi.com
Business Contact
 Mark Little
Title: CEO, Spire Biomedical, Inc.
Phone: (781) 275-6000
Email: mlittle@spirecorp.com
Research Institution
 Boston University
 Selim Unlu
 8 Saint Mary's Street
Boston, MA, 02215
 (617) 353-5067
 Nonprofit college or university
Abstract
Spire Corporation, through its Bandwidth Semiconductor subsidiary and in collaboration with colleagues in the Electrical Engineering Department at Boston University, proposes the metal-organic chemical vapor deposition (MOCVD) epigrowth of indium arsenide antimonide (InAsSb) avalanche photodiodes (APDs) ~2mm in diameter that should prove useful in laser radar and free-space communications. One particular composition (InAs90%Sb10%) is lattice-matched to GaSb wafers and would be used as a separate absorption region in this uncooled APD with a cutoff wavelength of about 4.4microns. The avalanche region would be in a homojunction in the higher bandgap GaSb. A thin two-compositional-step grading layer of InGaAsSb will help photogenerated carriers in the InAsSb absorption region reach the GaSb multiplication region by presenting smaller energy band transitions. This simpler lattice-matched separate absorption, grading, and multiplication region (SAGM) APD structure with a useful 4.4micron cutoff will serve as the experimental control to compare its performance with that of a strain-balanced APD using alternately tensile and compressive InAsSb layers with the goal of extending the cutoff wavelength from 4.4 to 5microns.

* information listed above is at the time of submission.

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