Resonant Tunnelling Diode for High-Power Room-Temperature Terahertz Emission

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$99,724.00
Award Year:
2007
Program:
STTR
Phase:
Phase I
Contract:
W911NF-07-C-0088
Agency Tracking Number:
A074-005-0081
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
SPIRE CORP.
One Patriots Park, Bedford, MA, 01730
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
065137978
Principal Investigator:
Kurt Linden
Senior Scientist
(781) 275-6000
klinden@spirecorp.com
Business Contact:
Mark Little
CEO, Spire Biomedical, Inc.
(781) 275-6000
mlittle@spirecorp.com
Research Institution:
UNIV. OF VIRGINIA
Boris Gelmont
Thornton Hall, E218
Charlottesville, VA, 22904
(434) 924-6090
Nonprofit college or university
Abstract
This Phase I STTR proposal involves the specification, conceptual design and analysis of staggered bandgap semiconductor heterostructures capable of producing interband resonant tunneling diodes (I?RTDs) with the potential for producing room-temperature terahertz oscillators with > 10 mW output power levels. Such unprecedented room-temperature terahertz power levels would enable deployment of entirely new instrumentation for monitoring chemical and biological agents and for standoff imaging of concealed threats, all of which are of great urgency for military and homeland defense. Based on promising preliminary studies carried out under US Army Research Office auspices, it has been shown that properly selected III-V compound semiconductor materials have the potential of producing I-RTD device structures capable of emitting terahertz radiation when optically triggered with short light pulses. Phase I will specify and analyze candidate I-RTD material structures and trigger light sources, select the most promising materials, and specify experimental methods for indirect measurement of device dynamics. Spire will subcontract the University of Virginia for assistance in applying models towards I?RTD device specification and design. Phase II will build and demonstrate a prototype I-RTD hybrid terahertz oscillator that exhibits > 10 mW across a significant portion of the terahertz frequency band.

* information listed above is at the time of submission.

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