Resonant Tunnelling Diode for High-Power Room-Temp

Award Information
Agency:
Department of Defense
Branch:
Army
Amount:
$749,808.00
Award Year:
2008
Program:
STTR
Phase:
Phase II
Contract:
W911NF-08-C-0067
Agency Tracking Number:
A074-005-0081
Solicitation Year:
2007
Solicitation Topic Code:
A07-T005
Solicitation Number:
N/A
Small Business Information
SPIRE CORP.
One Patriots Park, Bedford, MA, 01730
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
065137978
Principal Investigator
 Kurt Linden
 Senior Scientist
 (781) 275-6000
 klinden@spirecorp.com
Business Contact
 Mark Little
Title: CEO, Spire Biomedical, Inc.
Phone: (781) 275-6000
Email: mlittle@spirecorp.com
Research Institution
 UNIV. OF VIRGINIA
 Boris Gelmont
 Thorton Hall, E218
Charlottesville, VA, 22904
 (434) 924-6090
 Nonprofit college or university
Abstract
The objective of this STTR program is to model, design, build and demonstrate a novel, hybrid solid-state, interband resonant tunneling diode (I-RTD) oscillator capable of operating across broad portions of terahertz frequency band (300–600 GHz) at room temperature, with estimated terahertz output power levels in the 3–10 mW range. Such record terahertz oscillator performance will be of great use in military relevant applications such as chemical and biological agent detection, standoff imaging of concealed weapons and explosives, high-speed data processing and communications, and characterization of bio-molecular based devices and systems. Phase I of this program succeeded in modeling the I-RTD device, and generating candidate device structures based on the InGaAs/GaSbAs/InP compound semiconductor system, which can be synthesized in conventional epitaxial layer deposition systems, and then processed into devices. Phase II will grow epitaxial wafers of these material structures, process them into devices in Spire’s semiconductor foundry, and test the devices for terahertz emission spectra, output power vs. drive conditions, and device operating temperature limitations. Phase II will also continue and extend device structure modeling and carry out electrical modeling of the I-RTD devices and their associated circuits.

* information listed above is at the time of submission.

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