Integrated High-Frequency Vacuum Field Emission Transistors

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$748,734.00
Award Year:
2003
Program:
SBIR
Phase:
Phase II
Contract:
F29601-03-C-0047
Award Id:
57440
Agency Tracking Number:
021NM-2950
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
2020 Centimeter Circle, Austin, TX, 78758
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
010600422
Principal Investigator:
LeonidKarpov
Chief Scientist
(512) 997-7782
lkarpov@yahoo.com
Business Contact:
MarkEaton
President & CEO
(512) 997-7781
eaton@stellardisplay.com
Research Institute:
n/a
Abstract
Four types of Vacuum Field Emission Transistor (VFET) will be developed for integration into GaAs MMIC amplifer circuits. All VFETs lower circuit noise, partly by substituting vacuum gaps for noisy channels in solid state devices. VFETs alsosignificantly increase device speed and power performance, moving the trade-off curve out by possibly an order of magnitude. VFETs will be integrated on the same substrates as solid-state MMICs, providing a more reliable, elegant and less expensivealternative to microwave power modules connected to MMICs. Two types of GaAs edge emitter VFET, one all-metal and one GaN edge emitter will be designed, fabricated and characterized. Integration with MMICs can be by building in the VFET at the samesubstrate layers as the MMIC, by fabricating on top of the MMIC or by bonding through flip chip and other methods.

* information listed above is at the time of submission.

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