Integrated High-Frequency Vacuum Field Emission Transistors

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: F29601-03-C-0047
Agency Tracking Number: 021NM-2950
Amount: $748,734.00
Phase: Phase II
Program: SBIR
Awards Year: 2003
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
2020 Centimeter Circle, Austin, TX, 78758
DUNS: 010600422
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Leonid Karpov
 Chief Scientist
 (512) 997-7782
Business Contact
 Mark Eaton
Title: President & CEO
Phone: (512) 997-7781
Research Institution
Four types of Vacuum Field Emission Transistor (VFET) will be developed for integration into GaAs MMIC amplifer circuits. All VFETs lower circuit noise, partly by substituting vacuum gaps for noisy channels in solid state devices. VFETs alsosignificantly increase device speed and power performance, moving the trade-off curve out by possibly an order of magnitude. VFETs will be integrated on the same substrates as solid-state MMICs, providing a more reliable, elegant and less expensivealternative to microwave power modules connected to MMICs. Two types of GaAs edge emitter VFET, one all-metal and one GaN edge emitter will be designed, fabricated and characterized. Integration with MMICs can be by building in the VFET at the samesubstrate layers as the MMIC, by fabricating on top of the MMIC or by bonding through flip chip and other methods.

* information listed above is at the time of submission.

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