High Power Vacuum GaN

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$98,496.00
Award Year:
2004
Program:
STTR
Phase:
Phase I
Contract:
N00164-04-C-6057
Agency Tracking Number:
B045-013-0282
Solicitation Year:
2004
Solicitation Topic Code:
MDA04-T013
Solicitation Number:
n/a
Small Business Information
STELLAR MICRO DEVICES
2020 Centimeter Circle, Austin, TX, 78758
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
010600422
Principal Investigator:
Leonid Karpov
Chief Scientist
(512) 997-7782
lkarpov@yahoo.com
Business Contact:
Mark Eaton
President & CEO
(512) 997-7781
eaton@stellardisplay.com
Research Institution:
MIT
Tayo Akinwande
39-553a, MIT
Cambridge, MA, 02139
(617) 258-7974
Nonprofit college or university
Abstract
High power GaN devices are proposed in which vacuum gaps increase anode voltage and power. Anode placement will be optimized for device performance and power dissipation.

* information listed above is at the time of submission.

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