High Power Vacuum GaN

Award Information
Agency:
Department of Defense
Amount:
$98,496.00
Program:
STTR
Contract:
N00164-04-C-6057
Solitcitation Year:
2004
Solicitation Number:
N/A
Branch:
Missile Defense Agency
Award Year:
2004
Phase:
Phase I
Agency Tracking Number:
B045-013-0282
Solicitation Topic Code:
MDA04-T013
Small Business Information
STELLAR MICRO DEVICES
2020 Centimeter Circle, Austin, TX, 78758
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
010600422
Principal Investigator
 Leonid Karpov
 Chief Scientist
 (512) 997-7782
 lkarpov@yahoo.com
Business Contact
 Mark Eaton
Title: President & CEO
Phone: (512) 997-7781
Email: eaton@stellardisplay.com
Research Institution
 MIT
 Tayo Akinwande
 39-553a, MIT
Cambridge, MA, 02139
 (617) 258-7974
 Nonprofit college or university
Abstract
High power GaN devices are proposed in which vacuum gaps increase anode voltage and power. Anode placement will be optimized for device performance and power dissipation.

* information listed above is at the time of submission.

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