High Power Vacuum GaN

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: W9113M-05-C-0201
Agency Tracking Number: B045-013-0282
Amount: $749,177.00
Phase: Phase II
Program: STTR
Awards Year: 2005
Solicitation Year: 2004
Solicitation Topic Code: MDA04-T013
Solicitation Number: N/A
Small Business Information
2020 Centimeter Circle, Austin, TX, 78758
DUNS: 010600422
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Craig Farley
 Senior Research Engineer
 (512) 997-7780
Business Contact
 Mark Eaton
Title: President & CEO
Phone: (512) 997-7781
Email: eaton@stellardisplay.com
Research Institution
 Akintunde Akinwande
 77 Massachusett
Cambridge, MA, 02139
 (617) 258-7974
 Nonprofit college or university
The Phase I solicitation asked for novel approaches to power output stages in Transmit/Receive(T/R) modules fabricated from GaN or other wide bandgap semiconductor materials, leading to increased power and efficiency or decreased transmission line loss with proof-of-principle demonstrations or models based on open source X-Band Radar parameters. The SMD/MIT team responded with an innovative high power vacuum GaN (HPV-GaN) device which incorporates a vacuum emitter in a GaN FET. This allows the anode/drain voltage of the device to be increased by as much as 10 times over what is possible now and the anode to be moved away from the semiconductor channel, leading to compact devices with exceptional power added efficiency and substantial improvements in thermal management for X-band radar systems. This technology can be used with any of the GaN materials or process improvements being developed elsewhere, including HEMT structures; the vacuum emitter is essentially a power booster and thermal management approach to raise any given GaN technology to new performance levels.

* information listed above is at the time of submission.

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