Stability and Support Operations Visualization Aid (SASOVA)

Award Information
Agency: Department of Defense
Branch: Office of the Secretary of Defense
Contract: DAAD17-01-C-0081
Agency Tracking Number: OSD99-004
Amount: $746,496.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 2001
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
22660 Executive Drive, Sterling, VA, 20166
DUNS: 967508805
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Larry Rowland
 (703) 834-7535
 Lrowland@sterlingsemiconductor.com
Business Contact
 James LeMunyon
Phone: (703) 834-7535
Email: jlemunyon@sterlingsemiconductor.com
Research Institution
N/A
Abstract
Sterling Semiconductor (Sterling) has developed an epitaxial growth method that drastically reduces the defect density in off-axis 4H-SiC. In repsonse to the Office of Scientific Development SBIR topic OSD099-03, Sterling proposes a 24-month, $750K PhaseII SBIR program to further develop this technology for use in silicon carbidc (SiC) devices. Laterial vapor-phase epitaxial growth (L-VPE) will be used to grow over substrate defects such as micropipes and elementary screw dislocations and remove themfrom the active device area. Diodes and thyristors will be processed with guard ring edge termination to evaluate and improve the performance of L-VPE. Evaluation of these devices will help us to determine the causes of breakdown in SiC devices. Theproposed program will accelerate the insertion of SiC devices into DoD, utility, automotive, and industrial power applications.

* Information listed above is at the time of submission. *

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