Svt Associates, Inc.

Company Information

Company Name
Svt Associates, Inc.
Address
7620 Executive Drive
Eden Prairie, MN, 55344-3677
Phone
1 952-934-2100
URL
http://svta.com
DUNS
41
Number of Employees
35
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$10,020,521.00
126
SBIR Phase II
$18,306,762.20
28
STTR Phase I
$1,183,283.00
13
STTR Phase II
$2,499,484.00
4

Award List

  1. Highly Efficient InGaN-Based Solar Cells for High Intensity and High Temperature Operation

    Amount: $99,984.00

    In this SBIR Phase I program, we propose to fabricate high-efficiency and radiation hard solar cells based on InGaN material system that can cover the whole solar spectrum by adjusting the alloy compo ...

    SBIR Phase I 2010 National Aeronautics and Space Administration
  2. Ultra-thin AlN/GaN Heterostructures for Robust, Radiation-hard Electronics

    Amount: $99,976.00

    Exposure to high energy radiation can produces disruptive transient behavior as well as long-term changes in electronic device and circuit characteristics. Depending on both the material properties a ...

    SBIR Phase I 2010 Department of Energy
  3. Robust GaN-Based Photocathodes for High-Current RF Electron Injectors

    Amount: $999,398.00

    Advanced electron injectors are based on photocathode electron guns. These guns can produces electron beams with short pulses and high brightness. High efficiency photo-injectors are the electron so ...

    SBIR Phase II 2010 Department of Energy
  4. INNOVATIVE MIRROR TECHNOLOGY FOR X-RAY REFLECTIVE OPTICS

    Amount: $47,836.00

    THE PROPOSED PROGRAM WILL ADDRESS THE CRITICAL NEEDS OF X-RAY/UV WAVELENGTH MIRROR TECHNOLOGY BY PROPOSING A NEW FABRICATION TECHNIQUE. CALLED ION ENHANCED MOLECULAR BEAM DEPOSITION, THIS TECHNIQUE IS ...

    SBIR Phase I 1990 Department of Energy
  5. STRAINED TYPE II SUPERLATTICE FOR LONG WAVELENGTH INFRARED DETECTORS

    Amount: $49,625.00

    AS AN ALTERNATIVE TO MERCURY-CADMIUM TELLURIDE (MCT), WE PROPOSE TO INVESTIGATE THE OPTICAL PROPERTIES OF A RECENTLY INVENTED CLASS OF TYPE II STRAINED-LAYER SUPERLATTICES MADE OF (GA, AS)RELATED COMP ...

    SBIR Phase I 1991 Defense Advanced Research Projects AgencyDepartment of Defense
  6. AUTOMATED MBE PROCESS WITH REAL TIME SENSOR CONTROL

    Amount: $478,606.00

    WE PROPOSE AN AUTOMATED MOLECULAR BEAM EPITAXY (MBE) PROCESS FOR REPRODUCTABLE GROWTH OF SEMICONDUCTOR DEVICE STRUCTURES. WE WILL APPLY RHEED AND THERMAL OSCILLATION TECHNIQUES TO CONTROL THE RATE AND ...

    SBIR Phase II 1992 Air ForceDepartment of Defense
  7. STRAINED TYPE II SUPERLATTICE INFRARED DETECTORS

    Amount: $484,347.00

    THIS PROJECT WILL INVESTIGATE THE OPTICAL PROPERTIES OF A RECENTLY INVENTED CLASS OF TYPE-II, STRAINED-LAYER SUPERLATTICES MADE OF GAAS RELATED COMPOUNDS. THE NEW CONCEPT HAS ADVANTAGES, COMPARED WITH ...

    SBIR Phase II 1992 National Aeronautics and Space Administration
  8. PRECISE FLUX CONTROL FOR LATTICE MATCHED SUPERLATTICE MATERIALS

    Amount: $49,646.00

    AN EFFECTIVE METHOD FOR REDUCING FLUX TRANSIENTS IN MOLECULAR BEAM EPITAXY (MBE) EFFUSION CELL SOURCE IS PROPOSED. MBE IS A USEFUL TECHNIQUE FOR FABRICATING MANY IMPORTANT ELECTRONIC AND OPTOELECTRONI ...

    SBIR Phase I 1992 Air ForceDepartment of Defense
  9. INFRARED ASTRONOMY DETECTOR ARRAY APPLICATIONS

    Amount: $49,704.00

    AS AN ALTERNATIVE TO MERCURY-CADMIUM TELLURIDE (MCT), WE PROPOSE TO INVESTIGATE THE OPTICAL PROPERTIES OF A RECENTLY INVENTED CLASS OF TYPE II STRAINED-LAYER SUPERLATTICES MADE OF (GA,AS) RELATED COMP ...

    SBIR Phase I 1992 National Science Foundation
  10. Carbon and Tellurium Doping Sources for Molecular Beam Epitaxy (MBE)

    Amount: $240,336.00

    We propose two novel sources for improved carbon and tellurium dopants in MBE growth for III-V compounds semiconductors where heavy doping is required. The compact carbon source is electron beam heate ...

    SBIR Phase II 1993 Air ForceDepartment of Defense

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