Carbon and Tellurium Doping Sources for Molecular Beam Epitaxy (MBE)

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: N/A
Agency Tracking Number: 18285
Amount: $240,336.00
Phase: Phase II
Program: SBIR
Awards Year: 1993
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
73888 Washington Ave, Eden Paririe, MN, 55344
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Dr Peter P. Chow
 (612) 941-1898
Business Contact
Phone: () -
Research Institution
We propose two novel sources for improved carbon and tellurium dopants in MBE growth for III-V compounds semiconductors where heavy doping is required. The compact carbon source is electron beam heated and has a very fast thermal response. It is expected that increased monatomic carbon species in the flux would improve the dopant behavior. The tellurium source produces ionized species which would increase the dopant incorpration significantly. Very high dopant levels could be achieved with the new sources. The new designs are compatible application to existing MBE systems is possible. The prototype desings will be tested in actual thin film growth to evaluate their effectiveness. The Phase I project is anticipated to lead to improved device performance by providing better dopant behavior. by providing better dopant behavior.

* Information listed above is at the time of submission. *

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