(AlGaN)x(SiC)l-x Semiconductors For High Temperature Electronics

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$48,204.00
Award Year:
1993
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
19672
Agency Tracking Number:
19672
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
7620 Executive Drive, Eden Prairie, MN, 55344
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
James Van Hove
(612) 934-1993
Business Contact:
() -
Research Institute:
n/a
Abstract
A SIGNIFICANT NEED EXISTS FOR ELECTRONIC DEVICES OPERATING ABOVE 200 DEGREE C. THESE DEVICES COULD BE USED IN SENSING AND CONTROL APPLICATIONS IN TURBINE, HIGH POWER AND HIGH FREQUENCY MICROWAVE RADAR SYSTEMS, AUTOMOTIVE ELECTRONICS AND SATELLITE COOMUNICATION SYSTEMS. WE PROPOSE TO MEET THIS NEED WITH THE (III-N)x(SiC)x ALLOY SYSTEM. Al(x)Ga(1-x) IS A DIRECT, WIDE BANDGAP SEMICONDUCTOR (3.4 TO 6.2eV.) SiC's GAP IS ALSO LARGE (3.3eV). THEMELTING POINT OF GaN IS 2000K AND THAT OF AlN AND SiC IS OVER 3200K. NOVEL PROPERTIES ARE PREDICTED FOR THE ALLOY SYSTEM THAT DIFFER FROM EACH MATERIAL. WE PROPOSE TO DEMONSTRATE THE GROWTH OF AlGan ON SiC WITH JET-ASSISTED EPITAXY TO CREATE ENERGETIC NITROGEN. THE TASKS WILL INCLUDE FABRICATION OF THE SUPERSONIC N(2) JET SOURCE AND INSTALLATION IN AN EXISTING MBE SYSTEM. MATERIAL STUDIES ON THE GROWTH AND NUCLEATION OF AlGaN WILL BE DONE IN-SITU WITH RHEED, CATHODOLUMINESCENE, AND IR PRYOMETRIC INTERFEROMETERY. E-BEAM SOURCES FOR BOTH Si AND C BE WILL USED TO DOPE THE AlGaN AND TO GROW THE SiC. CALCULATIONS OF THE BAND STRUCTURE WILL BE DONE.

* information listed above is at the time of submission.

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