IN(X)GA(1-X)N GROWTH BY ION BEAM EPITAXY FOR VISIBLE AND UV LIGHT EMITTERS
Department of Defense
Missile Defense Agency
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Small Business Information
Svt Associates, Inc.
7620 Executive Drive, Eden Prairie, MN, 55344
Socially and Economically Disadvantaged:
James Van Hove, Phd
AbstractA significant need exists for solid state blue and UV light emitters. These wavelengths are useful for high density optical data storage and for visible flat panel displays. We propose to meet this need with InGaN. In(x)Ga(1-x)N is a direct, wide band gap semiconductor (2 to 3.5 ev). Its director band gap makes visible (blue) and UV emitters, and UV solar bling sensors possible. The material is extremely hard and capable of being used at high temperature. We propose to demonstrate the growth of InGaN on sapphire and ZnO with a low energy ion source to create energetic nitrogen radicals. The tasks will include modification of an existing MBE system for a nitrogen ion source and a high temperature growth heater.
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