IN(X)GA(1-X)N GROWTH BY ION BEAM EPITAXY FOR VISIBLE AND UV LIGHT EMITTERS

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$59,980.00
Award Year:
1994
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
25567
Agency Tracking Number:
25567
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
7620 Executive Drive, Eden Prairie, MN, 55344
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
James Van Hove, Phd
(612) 934-5502
Business Contact:
() -
Research Institute:
n/a
Abstract
A significant need exists for solid state blue and UV light emitters. These wavelengths are useful for high density optical data storage and for visible flat panel displays. We propose to meet this need with InGaN. In(x)Ga(1-x)N is a direct, wide band gap semiconductor (2 to 3.5 ev). Its director band gap makes visible (blue) and UV emitters, and UV solar bling sensors possible. The material is extremely hard and capable of being used at high temperature. We propose to demonstrate the growth of InGaN on sapphire and ZnO with a low energy ion source to create energetic nitrogen radicals. The tasks will include modification of an existing MBE system for a nitrogen ion source and a high temperature growth heater.

* information listed above is at the time of submission.

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