ULTRA-HIGH ABSORPTION L-VALLEY GASB QUANTUM-WELL INFRARED DETECTORS
Small Business Information
7620 Executive Drive, Eden Prairie, MN, 55344
Peter Chow, Phd
AbstractA newly discovered class of normal incidence quantum well (QW) photodetectors is proposed for very long wavelength (14-20 um) infrared detection. The material consists of bandgap engineered GaSb and GaAlSbAs L-valley QW's and its detection is based on interconduction subband transitions. Because exteemely high absorption coefficient (9,100 cm(-1)) is predicted and has been observed, it appears to be a very promising detector material for use in astrophysics, atmospheric remote sensing, and planetary applications. High absorption coefficient is especially desirable for longer wavelength uses. We propose to fabricate this new material by molecular beam epitaxy (MBE). The MBE growth system is equipped with in-situ diagnostics for close process monitoring in order to achieve exact composition control. The QW structure parameters will be determined from theoretical modeling and their infrared properties will be thoroughly investigated.
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