AlGaN-Channel Transistors for Power Management and Distribution

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 32006
Amount: $59,533.00
Phase: Phase I
Program: SBIR
Awards Year: 1996
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
7620 Executive Drive, Eden Prairie, MN, 55344
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 James M. Van Hove
 (612) 934-2100
Business Contact
Phone: () -
Research Institution
A significant need exists for power switching transistors used in spacecraft power management and distribution (PMAD) modules which can operate at high temperatures (400 C). SVT Associates proposes to meet-the need for high temperature electronic devices with an innovative large gate-width GaN junction field effect transistor (JFET). The Phase I program will demonstrate transistors based on N and P type GaN deposited in a Molecular Beam Epitaxy system using a RF nitrogen plasma source developed by SVT Associates. The Phase I target for the JFET will be 1 W overall power capacity and be able to operate at 400 C. The Phase II program will optimize the devices for operation in 1 to 100 W PMAD modules. Low-loss high temperature switching mode power supplies based on radiation hardened GaN can improve the cost, mass, and size of the spacecraft by reducing thermal shielding, eliminating active thermal management, increasing energy efficiency and reducing circuit dimensions.

* Information listed above is at the time of submission. *

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