AlInGaN Light Emitting Diodes for Spectroscopic Applications

Award Information
Agency:
Department of Energy
Branch
n/a
Amount:
$74,195.00
Award Year:
1997
Program:
SBIR
Phase:
Phase I
Contract:
DE-FG02-97ER82490
Award Id:
37305
Agency Tracking Number:
37305
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
7620 Executive Drive, Eden Prair, MN, 55344
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr. Jody J. Klaassen
Senior Research Scientist
(612) 934-2100
Business Contact:
Dr. Peter Chow
President
(612) 934-2100
Research Institute:
n/a
Abstract
122 AlInGaN Light Emitting Diodes for Spectroscopic Applications--SVT Associates, Inc., 7620 Executive Drive, Eden Prairie, MN 55344-3677; (612) 934-2100 Dr. Jody J. Klaassen, Principal Investigator Dr. Peter Chow, Business Official DOE Grant No. DE-FG02-97ER82490 Amount: $74,195 A number of international nonproliferation treaties, as well as national security requirements, relate to the protection, control, accountability and diversion of nuclear weapons usable materials. To monitor these activities, advanced sensors are required on satellites, planes, and on ground locations. One particular area where improvements are needed are advanced light sources for chemical spectroscopy by small, portable instruments. This project addresses the need for rugged, inexpensive, and efficient light emitting diodes (LEDs) operating in the blue and ultraviolet (UV) spectral regions. Currently available bright blue and UV light sources are expensive and fragile gas discharge tubes such as xenon and mercury arc lamps or deuterium lamps. Solid state electronic devices such as LEDs would be useful replacements for these more complex light sources. This project will develop solid state blue and UV emitting LEDs for chemical spectroscopy applications. In Phase I, Molecular Beam Epitaxy (MBE) will be used to grow material for blue and UV emitting LEDs from the aluminum indium gallium nitride (AlInGaN) material system. By varying the elemental composition of this material system, LEDs can be made which emit over a wide range of the UV/visible spectrum. Growth conditions for high quality indium gallium nitride (InGaN), gallium nitride (GaN), and aluminum gallium nitride (AlGaN) material for LEDs operating at 420, 300, and 300 nm, respectively, will be optimized. A complete LED structure will be grown and processed into diodes which will be characterized. The development of packaged, final product devices to be carried out in Phase II. Commercial Applications and Other Benefits as described by the awardee: Original equipment manufacturers who currently utilize blue and UV radiation equipment in their products will immediately benefit from blue and UV LEDs. These will include manufacturers of medical, pharmaceutical, or biological equipment for fluorescence viewing, sterilization and disinfection applications, or manufacturers of analytical instrumentation such as high performance liquid chromatography (HPLC).

* information listed above is at the time of submission.

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