MBE Sulfur Passivation of InP for High Power Millimeter Wave Electronics

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$99,959.00
Award Year:
1997
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
36186
Agency Tracking Number:
36186
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
7620 Executive Drive, Eden Prairie, MN, 55344
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Robert Hickman, Ii
(612) 934-2100
Business Contact:
() -
Research Institute:
n/a
Abstract
High frequency power semiconductor devices based on metal insulator semiconductor field effect transistor (MISFET) structures have long been desired for microwave and millimeter wave (mm wave) applications. Unfortunately, complex interface defects and Fermi level pinning at the surface of both gallium arsenide (GaAs) and indium phosphide (InP) have impeded technology to control and stabilize MIS structures on these promising materials systems. SVT Associates proposes to develop under Phase I a method to form reproducible sulfur passivated MIS structures on InP with low interface state densities by molecular beam epitaxy (MBE) of CdS films. Under Phase II, processes and hardware for sulfur passivation of high power mm wave InP MISFETs will be designed and tested.

* information listed above is at the time of submission.

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