MBE Sulfur Passivation of InP for High Power Millimeter Wave Electronics

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: N/A
Agency Tracking Number: 36186
Amount: $99,959.00
Phase: Phase I
Program: SBIR
Awards Year: 1997
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
7620 Executive Drive, Eden Prairie, MN, 55344
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Robert Hickman, Ii
 (612) 934-2100
Business Contact
Phone: () -
Research Institution
High frequency power semiconductor devices based on metal insulator semiconductor field effect transistor (MISFET) structures have long been desired for microwave and millimeter wave (mm wave) applications. Unfortunately, complex interface defects and Fermi level pinning at the surface of both gallium arsenide (GaAs) and indium phosphide (InP) have impeded technology to control and stabilize MIS structures on these promising materials systems. SVT Associates proposes to develop under Phase I a method to form reproducible sulfur passivated MIS structures on InP with low interface state densities by molecular beam epitaxy (MBE) of CdS films. Under Phase II, processes and hardware for sulfur passivation of high power mm wave InP MISFETs will be designed and tested.

* Information listed above is at the time of submission. *

Agency Micro-sites

SBA logo
Department of Agriculture logo
Department of Commerce logo
Department of Defense logo
Department of Education logo
Department of Energy logo
Department of Health and Human Services logo
Department of Homeland Security logo
Department of Transportation logo
Environmental Protection Agency logo
National Aeronautics and Space Administration logo
National Science Foundation logo
US Flag An Official Website of the United States Government