High Temperature AlN Gate Dielectric Field Effect Transistors

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$69,992.00
Award Year:
1997
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
36956
Agency Tracking Number:
36956
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
7620 Executive Drive, Eden Prairie, MN, 55344
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr. James M. Van Hove
(612) 934-2100
Business Contact:
() -
Research Institution:
n/a
Abstract
A major innovation is needed to produce power devices which can operate at high temperatures (400 _C). Current Silicon power transistors have a maximum operating temperature typically below 150*C. High-temperature and high power electronics dictate a wide bandgap semiconductor such as SiC or GaN be used. SVT Associates proposes to use AlN deposited by molecular beam epitaxy (MBE) as an insulator for both SiC and GaN based metal insulator semiconductor field effect transistors (MISFETs). AlN is ideal for this application due to its high breakdown voltage and thermal stability. In the Phase I program, a RF plasma source will be used to provide activated nitrogen for the growth of insulating AlN films. These layers will be used to fabricate capacitors on both GaN and SiC substrates to characterize the properties of the AlN as a function of temperature. A MISFET based on a GaN HEMT structure will be fabricated using the AlN insulator and tested at elevated temperatures.

* information listed above is at the time of submission.

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