Quantum Dots with Improved Uniformity for IR Sensors

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$68,994.00
Award Year:
2001
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
51860
Agency Tracking Number:
NASA1896
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
7620 Executive Drive, Eden Prairie, MN, 55344
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Aaron Moy
Senior Research Engineer
(952) 934-2100
moy@svta.com
Business Contact:
Jane Marks
Office Manager
(952) 934-2100
chow@svta.com
Research Institute:
n/a
Abstract
Quantum dot (QD) infrared photodetectors offer promise to improve performance over current bulk material technology. Namely, QD devices can have higher detectivity and reduced needs for cryogenic cooling. Current QD technology has yet to achieve theoretical goals however, mostly due to non-uniformities in their size and distribution. For this Phase I study, we propose improve the uniformity of QDs using patterned substrates. The structure of the substrate surface will influence the QD formation and enhance their uniformity. In(x)Ga(1-x)As(y)Sb(1-y) quaternary will be used as the active material. Both structural and optical characterization will be performed. These improved QDs will eventually be employed into a multiple QD layer photodetector structure.

* information listed above is at the time of submission.

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