High Efficiency InGaAsN Solar Cells

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$0.00
Award Year:
2001
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
991744
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
SVT Associates/BLMD, Inc.
7620 Executive Drive, Eden Prairie, MN, 55344
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr. Hove
MBE Lab Manager
() -
jvanhove@svta.com
Business Contact:
Shelly Harris
Business Manager
(612) 934-2100
pchow@svta.com
Research Institution:
n/a
Abstract
This Phase I program addresses the need for solar cells with greater than 30% efficiency for use as power sources for satellite systems operating in air mass zero (AM0) solar radiation. SVT Associates proposes to meet this need by developing a tandem cell composed of InGaAsN (1eV), GaAs (1.4 eV) and InGaP (1.85 eV) lattice matched to GaAs substrates. A projected efficiency of 38% would be obtained from this tandem cell. The key innovation of this device is the deposition of the InGaAsN material. This will be done using an atomic nitrogen source and an unique surfactant to enhance the growth process. We will team up for this program with Prof. W. I. Wang's group at Columbia University who has extensive experience with the growth of InGaAsN for laser applications. Bulk films and PN structures will be deposited and characterize. The quantum efficiency of InGaAsN diodes will be measured and used to estimate the efficiency of the tandem cell.

* information listed above is at the time of submission.

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