Quantum Dots with Improved Uniformity for IR Sensors

Award Information
Agency:
National Aeronautics and Space Administration
Amount:
$599,980.00
Program:
SBIR
Contract:
NAS3-02129
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
N/A
Award Year:
2002
Phase:
Phase II
Agency Tracking Number:
001896
Solicitation Topic Code:
N/A
Small Business Information
SVT Associates
7620 Executive Drive, Eden Prairie, MN, 55344
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
N/A
Principal Investigator
 Aaron Moy
 Senior Research Engineer
 (952) 934-2100
 moy@svta.com
Business Contact
 Jane Marks
Title: Office Manager
Phone: (952) 934-2100
Email: chow@svta.com
Research Institution
N/A
Abstract
Quantum dot (QD) infrared photodetectors offer promise to improve performance over current bulk material technology. Namely, QD devices can have higher detectivity and reduced needs for cryogenic cooling. Current QD technology has yet to achieve theoretical goals however, mostly due to non-uniformities in their size and distribution. For this Phase I study, we propose improve the uniformity of QDs using patterned substrates. The structure of the substrate surface will influence the QD formation and enhance their uniformity. In(x)Ga(1-x)As(y)Sb(1-y) quaternary will be used as the active material. Both structural and optical characterization will be performed. These improved QDs will eventually be employed into a multiple QD layer photodetector structure.

* information listed above is at the time of submission.

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