Indium Gallium Arsenide Nitride Quantum Dots for High Speed Infrared Emitters BMDO02-011B

Award Information
Agency:
Department of Defense
Amount:
$69,760.00
Program:
SBIR
Contract:
F49620-02-C-0078
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
Missile Defense Agency
Award Year:
2002
Phase:
Phase I
Agency Tracking Number:
02-0840
Solicitation Topic Code:
N/A
Small Business Information
Svt Assoc., Inc.
7620 Executive Drive, Eden Prairie, MN, 55344
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
185310997
Principal Investigator
 Aaron Moy
 Senior Research Scientist
 (952) 934-2100
 moy@svta.com
Business Contact
 Jane Marks
Title: Project Manager
Phone: (952) 934-2100
Email: marks@svta.com
Research Institution
N/A
Abstract
"The material Indium Gallium Arsenide Nitride (InGaAsN) is a novel compound semiconductor ideally suited for infrared optical devices. This material may be grown on GaAs substrates and can take advantage of mature GaAs processing technology. Quantum dots,a subset of the nanotechnology field, are structures whose physical dimensions are in the range of 10 nanometers, a size on the order of individual atoms themselves. Quantum physics theory predicts peculiarities in materials and devices which arefabricated at this exceedingly small scale, properties that can improve macro device performance. Quantum wells, with one dimension confined to the 10 nanometer range, are already utilized in commercial electronics components. Quantum dots are anadvancement of quantum wells in that structures are created with all three physical dimensions (length, width, depth) confined to the 10 nanometer order. Device improvements seen in quantum well devices are predicted to be even greater in quantum dotdevices once the quantum dot technology has matured. This Phase I study seeks to combine InGaAsN growth with quantum dots to create improved infrared light emitters. These GaAs-based devices have the potential of replacing InP/InGaAs-basedoptoelectronics for high speed optical data transmission. GaAs-based optoelectronic devices to replace InP/InGaAs technology. GaAs processing technology is more mature and less expensive than InP-based growth and p

* information listed above is at the time of submission.

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