Surfactant Enhanced Growth of High Quality Gallium Nitride (GaN) on Silicon for RF Power Amplifiers

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0006-03-C-0006
Agency Tracking Number: 022-0035
Amount: $69,995.00
Phase: Phase I
Program: SBIR
Awards Year: 2002
Solitcitation Year: N/A
Solitcitation Topic Code: N/A
Solitcitation Number: N/A
Small Business Information
Svt Assoc., Inc.
7620 Executive Drive, Eden Prairie, MN, 55344
Duns: 876868647
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Andrew Wowchak
 Senior Research Scientist
 (952) 934-2100
 wowchak@svta.com
Business Contact
 Jane Marks
Title: Project Manager
Phone: (952) 934-2100
Email: marks@svta.com
Research Institution
N/A
Abstract
The wide bandgap material GaN is ideally suited for high power and high temperature electronics. Potential applications include high power devices such as amplifiers, mobile digital, point-to-point and satellite communications, wireless area networking(WAN), high temperature sensor and electronics for combustion control, and electronic actuators. An investigation into the feasibility of the growth of high quality GaN on surfactant treated silicon substrates is proposed. Unlike substrates currently usedfor the fabrication of GaN-based devices, large diameter silicon substrates are readily available. Since device throughput is proportional to the square of the wafer diameter this approach could significantly lower production costs. Such a silicon-basedwafer platform could also provide the advanced architecture for integration of GaN-based devices into silicon circuits. Larger substrates will produce significantly less expensive devices such as HEMT and amplifiers for a variety of applications includingradar systems and consumer electronics.

* information listed above is at the time of submission.

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