Low Pressure Source for Mass-Selective, Diffusion Assisted Epitaxy

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9550-04-C-0051
Agency Tracking Number: F023-0193
Amount: $499,999.00
Phase: Phase II
Program: STTR
Awards Year: 2004
Solicitation Year: 2002
Solicitation Topic Code: AF02T005
Solicitation Number: N/A
Small Business Information
SVT ASSOC., INC.
7620 Executive Drive, Eden Prairie, MN, 55344
DUNS: 876868647
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: Y
Principal Investigator
 Amir Dabiran
 MBE Lab Manager
 (952) 934-2100
 dabiran@svta.com
Business Contact
 Scott Vandel
Title: Contract Administrator
Phone: (952) 934-2100
Email: vandel@svta.com
Research Institution
 University of Minnesota
 Philip I Cohen
 Dept of Elec. & Comp Eng., 200 Union Street S.E.
Minneapolis, MN, 55455
 (612) 625-5517
 Nonprofit college or university
Abstract
Epitaxial growth of non-equilibrium thin-film structures, which have high quality and abrupt interfaces, is still the main challenge that limits many material systems for applications in semiconductor devices. In this STTR Phase II program, SVT Associates (SVTA) in collaboration with the University of Minnesota (UMN) will develop a new RF plasma light-mass ion source, compatible with the low-pressure requirements of molecular beam epitaxy (MBE). This source will allow selective enhancement of the motion of surface atoms during thin film growth. Ion-enhanced MBE growth techniques will be used at SVTA and UMN to achieve high-quality growth of challenging material systems such as high-indium-content III-nitride films and novel high-temperature oxides. These are technologically important materials with broad applications in high frequency and high-power electronics, UV photodetectors and emitters, and MEMs and high-temperature device packaging.

* information listed above is at the time of submission.

Agency Micro-sites

US Flag An Official Website of the United States Government