High-Frequency, Low-Noise Nitride-Based Power Transistors Grown on Bulk III-N

Award Information
Agency:
National Aeronautics and Space Administration
Branch:
N/A
Amount:
$599,997.00
Award Year:
2004
Program:
SBIR
Phase:
Phase II
Contract:
NNC04CA13C
Agency Tracking Number:
023732
Solicitation Year:
2002
Solicitation Topic Code:
E2.04
Solicitation Number:
N/A
Small Business Information
SVT Associates
7620 Executive Drive, Eden Prairie, MN, 55344-3677
Hubzone Owned:
N
Socially and Economically Disadvantaged:
Y
Woman Owned:
N
Duns:
876868647
Principal Investigator
 Dr. Amir Dabiran
 Principal Investigator
 (952) 934-2100
 dabiran@svta.com
Business Contact
 Jane Marks
Title: Business Manager
Phone: (952) 934-2100
Email: marks@svta.com
Research Institution
N/A
Abstract
Electronics circuits that can function in very high temperatures (> 450?C) are needed for a number of applications including automotive and turbine engine control, industrial high-temperature processing, geothermal and deep-well oil drilling, satellite power management systems, and future planetary missions to Venus and Mercury. The key electronic components for these applications include 1) an instrumentation amplifier to be used in conjunction with different probes and transducers, and 2) a power amplifier for driving motors and actuators. We propose to develop AlGaN-based electronics grown on low-defect substrates for operations at temperatures > 450?C and pressures > 100 atmospheres.

* information listed above is at the time of submission.

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