High-Frequency, Low-Noise Nitride-Based Power Transistors Grown on Bulk III-N

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: NNC04CA13C
Agency Tracking Number: 023732
Amount: $599,997.00
Phase: Phase II
Program: SBIR
Awards Year: 2004
Solicitation Year: 2002
Solicitation Topic Code: E2.04
Solicitation Number: N/A
Small Business Information
SVT Associates
7620 Executive Drive, Eden Prairie, MN, 55344-3677
DUNS: 876868647
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: Y
Principal Investigator
 Dr. Amir Dabiran
 Principal Investigator
 (952) 934-2100
 dabiran@svta.com
Business Contact
 Jane Marks
Title: Business Manager
Phone: (952) 934-2100
Email: marks@svta.com
Research Institution
N/A
Abstract
Electronics circuits that can function in very high temperatures (> 450?C) are needed for a number of applications including automotive and turbine engine control, industrial high-temperature processing, geothermal and deep-well oil drilling, satellite power management systems, and future planetary missions to Venus and Mercury. The key electronic components for these applications include 1) an instrumentation amplifier to be used in conjunction with different probes and transducers, and 2) a power amplifier for driving motors and actuators. We propose to develop AlGaN-based electronics grown on low-defect substrates for operations at temperatures > 450?C and pressures > 100 atmospheres.

* information listed above is at the time of submission.

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