Al(In)GaN-Based, High-Electron Mobility Transistors (HEMTs) on SiC for High-Power Radar Applications

Award Information
Agency:
Department of Energy
Branch
n/a
Amount:
$99,997.00
Award Year:
2003
Program:
SBIR
Phase:
Phase I
Contract:
DE-FG02-03ER83791
Agency Tracking Number:
73017S03-I
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Svt Associates
7620 Executive Drive, Eden Prairie, MN, 55344
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Amir Dabiran
(952) 934-2100
dabiran@svta.com
Business Contact:
Janes Marks
(952) 934-2100
marks@svta.com
Research Institution:
n/a
Abstract
73017S03-I Substantial improvements in high-power performance are predicted for high-frequency Al(In)GaN-based HEMTs on SiC substrates, which are components of Synthetic Aperture Radar systems used in national security applications. The two main issues are the growth of high-quality, insulating GaN buffer layers and the formation of hyper-abrupt Al(In)GaN/(In)GaN interfaces. This project will fabricate Al(In)GaN/(In)GaN high-power transistors on highly resistive GaN layers on SiC substrates, using a Molecular Beam Epitaxy (MBE) technique. Phase I will optimize the MBE growth of Al(In)GaN/(In)GaN heterostructures on SiC substrates and develop microelectronics processes for the fabrication of high-power, AlInGaN-based HEMTs. Expected device parameters include: current density greater than 1.2A/mm, extrinsic transconductance values greater than 400 mS/mm, fT greater than 200 GHz, and power density greater than 8 W/mm at 40 GHz. Commercial Applications and Other Benefits as described by awardee: Improved AlInGaN-based power HEMTs should have numerous civilian and defense applications including radar tracking, cellular base stations, telemetry, and satellite communications.

* information listed above is at the time of submission.

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