Low-Noise Avalanche Photodiodes for Mid-IR Applications

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$99,843.00
Award Year:
2004
Program:
STTR
Phase:
Phase I
Contract:
FA9550-04-C-0134
Award Id:
67957
Agency Tracking Number:
F045-021-0180
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
7620 Executive Drive, Eden Prairie, MN, 55344
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
876868647
Principal Investigator:
Aaron Moy
Senior Research Engineer
(952) 934-2100
moy@svta.com
Business Contact:
Scott Vandal
Business Manager
(952) 934-2100
vandal@svta.com
Research Institution:
Columbia University
Wen I Wang
1312 Mudd, MC 4712, 500 W. 120th St.
New York, NY, 10027
(212) 854-1748
Nonprofit college or university
Abstract
Avalanche photodiodes (APDs) are the detector of choice for low noise, high speed, high sensitivity photodetectors. Applications in the mid-IR (3-5 micron) include optical trace gas detection, LADAR, quantum cryptography and targeting countermeasures. Currently there are no commercially available APDs operating in this wavelength range. To address this need, this Phase I program will investigate using the III-V ternary alloy InAsSb for APD applications. This compound semiconductor alloy has a low bandgap energy suitable for absorbing mid-IR photons. The InAsSb material will be combined with a p-i-n avalanche multiplication structure in a unique manner to create a low noise 3-5 micron wavelength APDs.

* information listed above is at the time of submission.

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