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Low-Noise Avalanche Photodiodes for Mid-IR Applications

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9550-04-C-0134
Agency Tracking Number: F045-021-0180
Amount: $99,843.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: AF04-T021
Solicitation Number: N/A
Timeline
Solicitation Year: 2004
Award Year: 2004
Award Start Date (Proposal Award Date): 2004-09-30
Award End Date (Contract End Date): 2005-06-30
Small Business Information
7620 Executive Drive
Eden Prairie, MN 55344
United States
DUNS: 876868647
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: Yes
Principal Investigator
 Aaron Moy
 Senior Research Engineer
 (952) 934-2100
 moy@svta.com
Business Contact
 Scott Vandal
Title: Business Manager
Phone: (952) 934-2100
Email: vandal@svta.com
Research Institution
 Columbia University
 Wen I Wang
 
1312 Mudd, MC 4712, 500 W. 120th St.
New York, NY 10027
United States

 (212) 854-1748
 Nonprofit College or University
Abstract

Avalanche photodiodes (APDs) are the detector of choice for low noise, high speed, high sensitivity photodetectors. Applications in the mid-IR (3-5 micron) include optical trace gas detection, LADAR, quantum cryptography and targeting countermeasures. Currently there are no commercially available APDs operating in this wavelength range. To address this need, this Phase I program will investigate using the III-V ternary alloy InAsSb for APD applications. This compound semiconductor alloy has a low bandgap energy suitable for absorbing mid-IR photons. The InAsSb material will be combined with a p-i-n avalanche multiplication structure in a unique manner to create a low noise 3-5 micron wavelength APDs.

* Information listed above is at the time of submission. *

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