High Power IMPATT-Mode AlGaN/GaN HFETs for mm-Wave Applications

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$99,922.00
Award Year:
2005
Program:
STTR
Phase:
Phase I
Contract:
W911NF-05-C-0096
Award Id:
74156
Agency Tracking Number:
A054-008-0227
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
7620 Executive Drive, Eden Prairie, MN, 55344
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
876868647
Principal Investigator:
Amir Dabiran
MBE Laboratory Manager
(952) 934-2100
dabiran@svta.com
Business Contact:
Leslie Price
Contract Administrator
(952) 934-2100
price@svta.com
Research Institution:
UNIV. OF ILLINOIS, URBANA-CHAM
Ilesanmi Adesida
127 Micro and Nanotechnology , 208 North Wright Street
Urbana, IL, 61801
(217) 333-3097
Nonprofit college or university
Abstract
A new Aluminum gallium nitride (AlGaN) based heterojunction field-effect transistor (HFET) structure is proposed that utilizes avalanche impact ionization for very high frequency operation (>100 GHz). The main goal of this program is to demonstrate the potential of these devices as a replacement for vacuum tubes in mm-wave applications including radars and communications transmitters. In the Phase I program, device modeling, epitaxial growth, device processing and characterization will be done to fabricate a prototype AlGaN/GaN HFET operating in the impact ionization avalanche transit-time (IMPATT) mode.

* information listed above is at the time of submission.

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