High Power IMPATT-Mode AlGaN/GaN HFETs for mm-Wave Applications

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$749,998.00
Award Year:
2006
Program:
STTR
Phase:
Phase II
Contract:
W911NF-06-C-0190
Award Id:
74156
Agency Tracking Number:
A054-008-0227
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
7620 Executive Drive, Eden Prairie, MN, 55344
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
876868647
Principal Investigator:
Amir Dabiran
MBE Laboratory Manager
(952) 934-2100
dabiran@svta.com
Business Contact:
Leslie Price
Contract Administrator
(952) 934-2100
price@svta.com
Research Institution:
UNIV. OF ILLINOIS, URBANA-CHAM
Ilesanmi Adesida
127 Micro and Nanotechnology
Urbana, IL, 61801
(217) 333-3097
Nonprofit college or university
Abstract
This STTR Phase II program is directed toward the development of a GaN-based hetrostructure filed effect transistor (HFET) for high-power mm-wave applications. The device makes use of a recently discovered impact ionization avalanche transit time (IMPATT)

* information listed above is at the time of submission.

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government