High Power IMPATT-Mode AlGaN/GaN HFETs for mm-Wave Applications

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-06-C-0190
Agency Tracking Number: A054-008-0227
Amount: $749,030.00
Phase: Phase II
Program: STTR
Awards Year: 2006
Solicitation Year: 2005
Solicitation Topic Code: A05-T008
Solicitation Number: N/A
Small Business Information
7620 Executive Drive, Eden Prairie, MN, 55344
DUNS: 876868647
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: Y
Principal Investigator
 Amir Dabiran
 MBE Laboratory Manager
 (952) 934-2100
 dabiran@svta.com
Business Contact
 Leslie Price
Title: Contract Administrator
Phone: (952) 934-2100
Email: price@svta.com
Research Institution
 UNIV. OF ILLINOIS, URBANA-CHAM
 Ilesanmi Adesida
 127 Micro and Nanotechnology
Urbana, IL, 61801
 (217) 333-3097
 Nonprofit college or university
Abstract
This STTR Phase II program is directed toward the development of a GaN-based hetrostructure filed effect transistor (HFET) for high-power mm-wave applications. The device makes use of a recently discovered impact ionization avalanche transit time (IMPATT)

* Information listed above is at the time of submission. *

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