High Power IMPATT-Mode AlGaN/GaN HFETs for mm-Wave Applications

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$749,030.00
Award Year:
2006
Program:
STTR
Phase:
Phase II
Contract:
W911NF-06-C-0190
Agency Tracking Number:
A054-008-0227
Solicitation Year:
2005
Solicitation Topic Code:
A05-T008
Solicitation Number:
n/a
Small Business Information
SVT ASSOC., INC.
7620 Executive Drive, Eden Prairie, MN, 55344
Hubzone Owned:
N
Socially and Economically Disadvantaged:
Y
Woman Owned:
N
Duns:
876868647
Principal Investigator:
Amir Dabiran
MBE Laboratory Manager
(952) 934-2100
dabiran@svta.com
Business Contact:
Leslie Price
Contract Administrator
(952) 934-2100
price@svta.com
Research Institution:
UNIV. OF ILLINOIS, URBANA-CHAM
Ilesanmi Adesida
127 Micro and Nanotechnology
Urbana, IL, 61801
(217) 333-3097
Nonprofit college or university
Abstract
This STTR Phase II program is directed toward the development of a GaN-based hetrostructure filed effect transistor (HFET) for high-power mm-wave applications. The device makes use of a recently discovered impact ionization avalanche transit time (IMPATT)

* information listed above is at the time of submission.

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