AlInGaN-based Transistors for Advanced Applications

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$119,784.00
Award Year:
2005
Program:
SBIR
Phase:
Phase I
Contract:
W911QX-05-C-0073
Agency Tracking Number:
A043-048-1290
Solicitation Year:
2004
Solicitation Topic Code:
A04-048
Solicitation Number:
2004.3
Small Business Information
SVT ASSOC., INC.
7620 Executive Drive, Eden Prairie, MN, 55344
Hubzone Owned:
N
Socially and Economically Disadvantaged:
Y
Woman Owned:
N
Duns:
876868647
Principal Investigator:
Andrei Osinsky
Manager of Device Development
(952) 934-2100
osinsky@svta.com
Business Contact:
Leslie Price
Contract Administrator
(952) 934-2100
price@svta.com
Research Institution:
n/a
Abstract
Aluminum gallium nitride (AlGaN) based high electron mobility transistors (HEMTs) have been demonstrated with superior characteristics that make them promising candidates for high-performance radar, communication, imaging and other advanced applications. Still, there remain performance and reproducibility related issues that must be addressed to achieve successful commercialization of these devices. In this Phase I project, we will investigate indium containing AlInGaN HEMTs as part of the effort towards improving dc and rf performance. The work will involve novel device design, material growth, and wafer processing.

* information listed above is at the time of submission.

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