AlInGaN-based Transistors for Advanced Applications

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911QX-05-C-0073
Agency Tracking Number: A043-048-1290
Amount: $119,784.00
Phase: Phase I
Program: SBIR
Awards Year: 2005
Solicitation Year: 2004
Solicitation Topic Code: A04-048
Solicitation Number: 2004.3
Small Business Information
7620 Executive Drive, Eden Prairie, MN, 55344
DUNS: 876868647
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: Y
Principal Investigator
 Andrei Osinsky
 Manager of Device Development
 (952) 934-2100
Business Contact
 Leslie Price
Title: Contract Administrator
Phone: (952) 934-2100
Research Institution
Aluminum gallium nitride (AlGaN) based high electron mobility transistors (HEMTs) have been demonstrated with superior characteristics that make them promising candidates for high-performance radar, communication, imaging and other advanced applications. Still, there remain performance and reproducibility related issues that must be addressed to achieve successful commercialization of these devices. In this Phase I project, we will investigate indium containing AlInGaN HEMTs as part of the effort towards improving dc and rf performance. The work will involve novel device design, material growth, and wafer processing.

* information listed above is at the time of submission.

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