AlInGaN-based Transistors for Advanced Applications

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911QX-06-C-0083
Agency Tracking Number: A043-048-1290
Amount: $728,079.00
Phase: Phase II
Program: SBIR
Awards Year: 2006
Solicitation Year: 2004
Solicitation Topic Code: A04-048
Solicitation Number: 2004.3
Small Business Information
7620 Executive Drive, Eden Prairie, MN, 55344
DUNS: 876868647
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: Y
Principal Investigator
 Andrei Osinsky
 Manager of Device Develop
 (952) 934-2100
Business Contact
 Leslie Price
Title: Contract Administrator
Phone: (952) 934-2100
Research Institution
Aluminum gallium nitride (AlGaN) based high electron mobility transistors (HEMTs) have been demonstrated with superior characteristics that make them promising candidates for high-performance radar, communication and other advanced applications. Still, there remain performance and reproducibility related issues that must be addressed to achieve successful commercialization of these devices. In this Phase II project, we will develop indium containing HEMTs for improved dc and rf performance. The work will involve novel device design, material growth, material and device characterization, and wafer processing.

* information listed above is at the time of submission.

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