AlInGaN-based Transistors for Advanced Applications

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$728,079.00
Award Year:
2006
Program:
SBIR
Phase:
Phase II
Contract:
W911QX-06-C-0083
Award Id:
73513
Agency Tracking Number:
A043-048-1290
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
7620 Executive Drive, Eden Prairie, MN, 55344
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
876868647
Principal Investigator:
Andrei Osinsky
Manager of Device Develop
(952) 934-2100
osinsky@svta.com
Business Contact:
Leslie Price
Contract Administrator
(952) 934-2100
price@svta.com
Research Institute:
n/a
Abstract
Aluminum gallium nitride (AlGaN) based high electron mobility transistors (HEMTs) have been demonstrated with superior characteristics that make them promising candidates for high-performance radar, communication and other advanced applications. Still, there remain performance and reproducibility related issues that must be addressed to achieve successful commercialization of these devices. In this Phase II project, we will develop indium containing HEMTs for improved dc and rf performance. The work will involve novel device design, material growth, material and device characterization, and wafer processing.

* information listed above is at the time of submission.

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