High-Performance Type II Superlattice LWIR Detector on Si

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$69,773.00
Award Year:
2006
Program:
SBIR
Phase:
Phase I
Contract:
W15P7T-07-C-W001
Agency Tracking Number:
A062-122-2797
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
SVT ASSOC., INC.
7620 Executive Drive, Eden Prairie, MN, 55344
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
876868647
Principal Investigator:
Aaron Moy
Senior Research Engineer
(952) 934-2100
moy@svta.com
Business Contact:
Leslie Price
Contract Administrator
(952) 934-2100
price@svta.com
Research Institution:
n/a
Abstract
SVT Associates proposes an innovative application of several technologies to create device quality large diameter GaSb virtual substrates on Si. In combination with this GaSb/Si substrate, a novel arsenic isolation apparatus will be applied to Type-II superlattice (SL) growth for LWIR detector applications. Photodetector arrays using this material are of great interest to the DoD for various applications including, in particular, optical detection and tracking of missiles. Applying these techniques to the Type-II SL grown on Si should result in lower dislocation density, higher material purity, smoother surfaces, and more abrupt SL interfaces of SL, all of which are important factors that should significantly enhance material quality and uniformity, and device operation. We intend to characterize the positive effects of these technologies in Type-II SL grown on Si in Phase I and fabricate discrete LWIR detectors. In Phase II we will refine the processes to realize larger diameter GaSb and Type-II SL detector arrays.

* information listed above is at the time of submission.

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