High-Performance Type II Superlattice LWIR Detector on Si

Award Information
Agency: Department of Defense
Branch: Army
Contract: W15P7T-07-C-W001
Agency Tracking Number: A062-122-2797
Amount: $69,773.00
Phase: Phase I
Program: SBIR
Awards Year: 2006
Solitcitation Year: 2006
Solitcitation Topic Code: A06-122
Solitcitation Number: 2006.2
Small Business Information
SVT ASSOCIATES, INC.
7620 Executive Drive, Eden Prairie, MN, 55344
Duns: 876868647
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: Y
Principal Investigator
 Aaron Moy
 Senior Research Engineer
 (952) 934-2100
 moy@svta.com
Business Contact
 Leslie Price
Title: Contract Administrator
Phone: (952) 934-2100
Email: price@svta.com
Research Institution
N/A
Abstract
SVT Associates proposes an innovative application of several technologies to create device quality large diameter GaSb virtual substrates on Si. In combination with this GaSb/Si substrate, a novel arsenic isolation apparatus will be applied to Type-II superlattice (SL) growth for LWIR detector applications. Photodetector arrays using this material are of great interest to the DoD for various applications including, in particular, optical detection and tracking of missiles. Applying these techniques to the Type-II SL grown on Si should result in lower dislocation density, higher material purity, smoother surfaces, and more abrupt SL interfaces of SL, all of which are important factors that should significantly enhance material quality and uniformity, and device operation. We intend to characterize the positive effects of these technologies in Type-II SL grown on Si in Phase I and fabricate discrete LWIR detectors. In Phase II we will refine the processes to realize larger diameter GaSb and Type-II SL detector arrays.

* information listed above is at the time of submission.

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