Cost Effective Manufacturing of Device Quality Large Diameter InSb

Award Information
Agency:
Department of Defense
Amount:
$99,741.00
Program:
SBIR
Contract:
FA8718-06-C-0051
Solitcitation Year:
2006
Solicitation Number:
2006.1
Branch:
Air Force
Award Year:
2006
Phase:
Phase I
Agency Tracking Number:
F061-212-3643
Solicitation Topic Code:
AF06-212
Small Business Information
SVT ASSOCIATES, INC.
7620 Executive Drive, Eden Prairie, MN, 55344
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
Y
Duns:
876868647
Principal Investigator
 Peter Chow
 General Manager
 (952) 934-2100
 chow@svta.com
Business Contact
 Leslie Price
Title: Contract Administrator
Phone: (952) 934-2100
Email: price@svta.com
Research Institution
N/A
Abstract
SVT Associates proposes an innovative ion-beam, atomic Hydrogen and off-axis substrate techniques for device quality large diameter InSb for 3-5 um IR detector applications. Photodetector arrays using this material are of great interest to the DoD for various applications including, in particular,optical detection and tracking of missiles. Ion-beam, Hydrogen atomic, and off-axis substrates have already been shown to improve other III-V growth, such as GaN, GaAs, and InAs. Applying the these techniques to the InSb grown on Si should result in lower dislocation density, higher material purity and smoother surface morphology, all important factors that should significantly enhance material quality and device operation. We intend to characterize the positive effects of these techniques in large area InSb in Phase I. In Phase II we will refine the process to realize larger diameter InSb and InSb-based discrete detectors and detector arrays.

* information listed above is at the time of submission.

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