High-Performance Type II Superlattice LWIR Detector on Six Inch (6”) Si

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$773,407.00
Award Year:
2008
Program:
SBIR
Phase:
Phase II
Contract:
W909MY-08-C-0054
Agency Tracking Number:
A062-122-2797
Solicitation Year:
2006
Solicitation Topic Code:
A06-122
Solicitation Number:
2006.2
Small Business Information
SVT ASSOC., INC.
7620 Executive Drive, Eden Prairie, MN, 55344
Hubzone Owned:
N
Socially and Economically Disadvantaged:
Y
Woman Owned:
N
Duns:
876868647
Principal Investigator:
Aaron Moy
Senior Research Engineer
(952) 934-2100
moy@svta.com
Business Contact:
Leslie Price
Business Manager
(952) 934-2100
price@svta.com
Research Institution:
n/a
Abstract
SVT Associates proposes an innovative 24-month Phase II program to further develop high performance Type-II superlattice focal plane arrays on Silicon substrates up to 6-inches in diameter. The Type-II superlattice material system is capable of infrared detection from 2 to > 30 micron, depending on layer composition and thickness. Photodetector arrays using this material are of great interest to the DoD for various applications including, in particular, optical detection and tracking of missiles. Silicon is desired for its robust structure and large area, which could yield dies with lower unit costs. Silicon also offers integration with readout circuitry and MEMs technology. In the Phase I record high quality GaSb on Si was grown, using proprietary buffer techniques, with x-ray FWHM values comparable to that of bulk GaSb. Test Type-II superlattice layers grown on GaSb/Si showed equally impressive data. The Phase II program will refine the buffer technology and fabricate LWIR photodetectors on Si.

* information listed above is at the time of submission.

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