GaN-Based, Low-Voltage Avalanche Photodiodes for Robust and Compact UV Imagers

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$99,972.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
NNX09CD92P
Agency Tracking Number:
085221
Solicitation Year:
2008
Solicitation Topic Code:
S1.05
Solicitation Number:
n/a
Small Business Information
SVT Associates
7620 Executive Drive, Eden Prairie, MN, 55344-3677
Hubzone Owned:
N
Socially and Economically Disadvantaged:
Y
Woman Owned:
N
Duns:
876868647
Principal Investigator:
Amir Dabiran
Principal Investigator
(952) 934-2100
dabiran@svta.com
Business Contact:
Leslie Price
Business Official
(952) 934-2100
price@svta.com
Research Institution:
n/a
Abstract
This Phase I SBIR program is directed toward the development of a novel low-voltage (~10V) AlGaN-based multi-quantum well (MQW) avalanche photodiode (APD) on low-cost substrates. The high-gain, high-speed and low-noise operation of the proposed device allow the replacement of bulkier and more fragile photomultiplier tubes (PMTs) for many UV photon-counting and imaging applications. In particular, reduction in size and weight in addition to improvements in reliability and ruggedness compared to PMTs, make this technology very suitable for some of the NASA's planned space missions as well as other civilian and defense applications that require high-sensitivity, solar-blind UV detection.

* information listed above is at the time of submission.

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