Symetrix Corp.

Basic Information

5055 Mark Dabling Blvd Suite
100
Colorado Springs, CO, 80918

Company Profile

n/a

Additional Details

Field Value
DUNS: n/a
Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N
Number of Employees: n/a


  1. THIN-FILM, HIGH DIELECTRIC CONSTANT, MICRON-SIZED CAPACITOR MATERIALS

    Amount: $247,107.00

    WE PROPOSE AN EXTENSIVE STUDY OF MATERIALS AND DEPOSITION TECHNIQUES SUITABLE FOR FABRICATION OF HIGH-DIELECTRIC CONSTANT THIN-FILM DRAM (DYNAMIC RANDOM ACCESS MEMORY) CAPACITORS. THESE CAPACITORS WIL ...

    SBIR Phase II 1993 Defense Advanced Research Projects Agency Department of Defense
  2. THIN-FILM, HIGH DIELECTRIC CONSTANT, MICRON-SIZED CAPACITOR MATERIALS

    Amount: $49,162.00

    N/A

    SBIR Phase I 1991 Defense Advanced Research Projects Agency Department of Defense
  3. RADIATION-HARD FERROELECTRIC-ON-GAAS RANDOM ACCESS MEMORIES FOR MISSILES AND/OR SPACECRAFT

    Amount: $476,000.00

    A SYSTEMATIC STUDY OF THE SPUTTERING TECHNOLOGY AND INTERFACE METALLURGY FOR LEAD ZIRCONATE TITANTE/PLATIUM/GALLIUM-ARSENIDE (PZT/PT/GAAS) IS BEING UNDERTAKEN THAT IS EXPECTED TO PERMIT LARGE, RAD-HAR ...

    SBIR Phase II 1990 Missile Defense Agency Department of Defense
  4. NEW MATERIALS AND IMPROVED ANNEALING PROCESSING AND CHARACTERIZATION FOR FERROELECTRIC-ON-GAAS MEMORIES

    Amount: $50,000.00

    IF THE NEW THIN-FILM PROTOTYPE FERROELECTRIC MEMORIES ARE TO BE NECCESSFULLY INTEGRATED ONTO GAAS CIRCUITRY, IT WILL BE NECESSARY TO DEVELOP RAPID THERMAL PROCESSING TECHNIQUES TO PROTECT THE GAAS JUN ...

    SBIR Phase I 1989 Defense Advanced Research Projects Agency Department of Defense
  5. RESEARCH ON NONVOLATILE FERROELECTRIC RAMS

    Amount: $449,000.00

    MEASUREMENTS OF THE HYSTERESIS CHARACTERISTICS AND SWITCHING KINETICS WILL BE MADE ON THREE FERROELECTRIC THIN-FILM MEMORY MATERIALS: LEAD GERMANATE WITH 0 TO 10% SILICON (PB[5]GE[3-X]SI[X]O[11]); BIS ...

    SBIR Phase II 1988 Navy Department of Defense
  6. DEVELOPMENT OF KNO(3) FERROELECTRIC MEMORIES

    Amount: $500,000.00

    WE HAVE FABRICATED POTASSIUM NITRATE FERROELECTRIC MEMORIES IN THE FORM OF 32 X 32 CELL ARRAYS ON GLASS SUBSTRATES (1KB) AND MEASURED THEIR SWITCHING TIMES AND READ WRITE CHARACTERISTICS. THE THINNEST ...

    SBIR Phase II 1988 Navy Department of Defense
  7. RADIATION-HARD FERROELECTRIC-ON-GAAS RANDOM ACCESS MEMORIES FOR MISSILES AND/OR SPACECRAFT

    Amount: $49,992.00

    N/A

    SBIR Phase I 1988 Missile Defense Agency Department of Defense
  8. DEVELOPMENT OF KNO(3) FERROELECTRIC MEMORIES

    Amount: $49,459.00

    N/A

    SBIR Phase I 1987 Navy Department of Defense
  9. RESEARCH ON NONVOLATILE FERROELECTRIC RAMS

    Amount: $49,459.00

    N/A

    SBIR Phase I 1987 Navy Department of Defense

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