Symetrix Corp.

Company Information

Company Name
Symetrix Corp.
Address
5055 Mark Dabling Blvd Suite
100
Colorado Springs, CO, 80918
Phone
n/a
URL
n/a
DUNS
n/a
Number of Employees
n/a

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$248,072.00
5
SBIR Phase II
$1,672,107.00
4
Chart code to be here

Award List

  1. RESEARCH ON NONVOLATILE FERROELECTRIC RAMS

    Amount: $449,000.00

    MEASUREMENTS OF THE HYSTERESIS CHARACTERISTICS AND SWITCHING KINETICS WILL BE MADE ON THREE FERROELECTRIC THIN-FILM MEMORY MATERIALS: LEAD GERMANATE WITH 0 TO 10% SILICON (PB[5]GE[3-X]SI[X]O[11]); BIS ...

    SBIR Phase II 1988 NavyDepartment of Defense
  2. DEVELOPMENT OF KNO(3) FERROELECTRIC MEMORIES

    Amount: $500,000.00

    WE HAVE FABRICATED POTASSIUM NITRATE FERROELECTRIC MEMORIES IN THE FORM OF 32 X 32 CELL ARRAYS ON GLASS SUBSTRATES (1KB) AND MEASURED THEIR SWITCHING TIMES AND READ WRITE CHARACTERISTICS. THE THINNEST ...

    SBIR Phase II 1988 NavyDepartment of Defense
  3. RADIATION-HARD FERROELECTRIC-ON-GAAS RANDOM ACCESS MEMORIES FOR MISSILES AND/OR SPACECRAFT

    Amount: $476,000.00

    A SYSTEMATIC STUDY OF THE SPUTTERING TECHNOLOGY AND INTERFACE METALLURGY FOR LEAD ZIRCONATE TITANTE/PLATIUM/GALLIUM-ARSENIDE (PZT/PT/GAAS) IS BEING UNDERTAKEN THAT IS EXPECTED TO PERMIT LARGE, RAD-HAR ...

    SBIR Phase II 1990 Missile Defense AgencyDepartment of Defense
  4. NEW MATERIALS AND IMPROVED ANNEALING PROCESSING AND CHARACTERIZATION FOR FERROELECTRIC-ON-GAAS MEMORIES

    Amount: $50,000.00

    IF THE NEW THIN-FILM PROTOTYPE FERROELECTRIC MEMORIES ARE TO BE NECCESSFULLY INTEGRATED ONTO GAAS CIRCUITRY, IT WILL BE NECESSARY TO DEVELOP RAPID THERMAL PROCESSING TECHNIQUES TO PROTECT THE GAAS JUN ...

    SBIR Phase I 1989 Defense Advanced Research Projects AgencyDepartment of Defense
  5. THIN-FILM, HIGH DIELECTRIC CONSTANT, MICRON-SIZED CAPACITOR MATERIALS

    Amount: $247,107.00

    WE PROPOSE AN EXTENSIVE STUDY OF MATERIALS AND DEPOSITION TECHNIQUES SUITABLE FOR FABRICATION OF HIGH-DIELECTRIC CONSTANT THIN-FILM DRAM (DYNAMIC RANDOM ACCESS MEMORY) CAPACITORS. THESE CAPACITORS WIL ...

    SBIR Phase II 1993 Defense Advanced Research Projects AgencyDepartment of Defense
  6. DEVELOPMENT OF KNO(3) FERROELECTRIC MEMORIES

    Amount: $49,459.00

    N/A

    SBIR Phase I 1987 NavyDepartment of Defense
  7. THIN-FILM, HIGH DIELECTRIC CONSTANT, MICRON-SIZED CAPACITOR MATERIALS

    Amount: $49,162.00

    N/A

    SBIR Phase I 1991 Defense Advanced Research Projects AgencyDepartment of Defense
  8. RESEARCH ON NONVOLATILE FERROELECTRIC RAMS

    Amount: $49,459.00

    N/A

    SBIR Phase I 1987 NavyDepartment of Defense
  9. RADIATION-HARD FERROELECTRIC-ON-GAAS RANDOM ACCESS MEMORIES FOR MISSILES AND/OR SPACECRAFT

    Amount: $49,992.00

    N/A

    SBIR Phase I 1988 Missile Defense AgencyDepartment of Defense

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