RESEARCH ON NONVOLATILE FERROELECTRIC RAMS

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$449,000.00
Award Year:
1988
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Agency Tracking Number:
6509
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Symetrix Corp.
215 E Sunbird Cliffs Ln, Colorado Springs, CO, 80907
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Carlos Pas De Araujo
(303) 528-6799
Business Contact:
() -
Research Institution:
n/a
Abstract
MEASUREMENTS OF THE HYSTERESIS CHARACTERISTICS AND SWITCHING KINETICS WILL BE MADE ON THREE FERROELECTRIC THIN-FILM MEMORY MATERIALS: LEAD GERMANATE WITH 0 TO 10% SILICON (PB[5]GE[3-X]SI[X]O[11]); BISMOTH TITANATE (BI[4]TI[3]O[12]); AND POTASSIUM NITRATE (KNO[3]). EMPHASIS WILL BE PLACED IN DETERMINING THE RATE-LIMITING PARAMETER FOR SWITCHING (E.G., SIDEWAYS DOMAIN WALL SPEED IN THE CASE OF KNO[3]), DEPENDENCE OF SWITCHING TIMES UPON FILM THICKNESS, CELL AREA, AND EXTERNAL LOAD. IN KNO(3) IT IS KNOWN THAT THERE IS A MINIMUM IN THE DEPENDENCEOF SWITCHING VOLTAGE UPON THICKNESS WITH A THICKNESS WINDOW OF 65 TO 800 NM OVER WHICH SWITCHING VOLTAGES LIE BELOW A 4.5V (THE STANDARD TTL/CMOS LOGIC LEVELS FOR SILICON INTEGRATED CIRCUITS). THIS THICKNESS DEPENDENCE WILL BE DETERMINED FOR PB(5)GE(3-X)SI(X)O(11) AND BI(4)TI(3)O(12) IN THE PRESENT WORK. IN THE CASE OF THE LEAD GERMANATE ALLOYS, THE ADDITION OF SILICON IS PROPOSED TO ELIMINATE (OR AT LEAST MINIMIZE) THE PROBLEM OF LEAKAGE CURRENT IN THE MEMORY CELLS. FATIGUE STUDIED WILL BE MADE WITH EMPHASIS UPON THE THEORETICAL MODEL OF SROLOVITZ. SWITCHING TIMES DEMONSTRATED BY THE PRINCIPAL INVESTIGATORS OF THIS PROPOSAL FOR KNO(3) THIN-FILM MEMORIES ARE ALREADY NEARLY WITHIN THE LIMITS REQUESTED IN THE PROGRAM DESCRIPTION:1.6 TO 1.8V THRESHOLD AND A 20 NS SWITCHING TIME AT 6 TO 9V.

* information listed above is at the time of submission.

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