DEVELOPMENT OF KNO(3) FERROELECTRIC MEMORIES

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N/A
Agency Tracking Number: 6510
Amount: $500,000.00
Phase: Phase II
Program: SBIR
Awards Year: 1988
Solitcitation Year: N/A
Solitcitation Topic Code: N/A
Solitcitation Number: N/A
Small Business Information
Symetrix Corp.
215 E Sunbrid Cliffs Ln, Colorado Springs, CO, 80907
Duns: N/A
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Robert Venes
 (303) 594-4455
Business Contact
Phone: () -
Research Institution
N/A
Abstract
WE HAVE FABRICATED POTASSIUM NITRATE FERROELECTRIC MEMORIES IN THE FORM OF 32 X 32 CELL ARRAYS ON GLASS SUBSTRATES (1KB) AND MEASURED THEIR SWITCHING TIMES AND READ WRITE CHARACTERISTICS. THE THINNEST KNO(3) FILMS TESTED (75NM) YIELD 20 NS READ-WRITE TIMES AND HIGH BREAKDOWN VOLTAGES (17V). MINIMUM ADDRESS VOLTAGES OF 1.6V ARE ACHIEVED AT 150 NM THICKNESS. A THICKNESS WINDOW FROM 65 TO 800 NM IS COMPATIBLE WITH 4.5V STANDARD SILICON LOGIC LEVELS (TTL-CMOS). NEUTRON HARDNESS TO 5 X 10 TO THE 13TH POWER HAS BEEN MEASURED FORM SOME FILMS. WE WILL FABRICATE A NUMBER OF 1KB ARRAYS AND STUD THE PROCESSING PARAMETERS THAT INFLUENCE FATIGUE LIMITS. WE HAVE RECENTRLY DISCOVERED THAT A SINGLE 10V "RESTORE" PULSE RETURNS THE KNO(3) MEMORIES TO A STATE VERY NEAR THAT OF VIRGIN DEVICES. RELATED ELECTRICAL REMEDIES FOR FATIGUE/ENDURE PROBLEMS WILL BE ANALYZED UNDER THE PROPOSED WORK, TOGETHER WITH CHEMICAL APPROACHES INVOLVING DOPANTS.

* information listed above is at the time of submission.

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