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Improved Dielectric Gate Layer for GaN Based Devices

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: N/A
Agency Tracking Number: 36343
Amount: $99,995.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 1997
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
401 Camp Craft Rd.
Austin, TX 78746
United States
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Dr Keith D. Jamison
 (512) 306-1100
Business Contact
Phone: () -
Research Institution

One of the most important problems to overcome for the development of wide bandgap metal insulator semiconductor (MIS) technology is development of high-quality gate dielectric layers. Systems & Processes Engineering Corporation (SPEC), in collaboration with the University of Texas at Austin, proposes to compare both deposited silicon nitride and aluminum nitride as the dielectric gate layer for gallium nitride based devices.During Phase I of the program, SPEC will deposit both Si3N4 and A1N on GaN substrates and determine the electrical properties of the resultant dielectric layer such as the amount of charge the gate can control and compare the results to other published data on GaN. Phase II of the program will choose and optimize the best dielectric material and deposition method, use this chosen dielectric as the gate layer on GaN devices, and demonstrate improved performance of the device.

* Information listed above is at the time of submission. *

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