Use of Si3N4 as the Dielectric Gate Layer for Wide Bandgap Semiconductor Devices
Department of Defense
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Systems & Processes
401 Camp Craft Rd, Austin, TX, 78746
Socially and Economically Disadvantaged:
Dr. Keith Jamison
AbstractOne of the most important problems to overcome for the development of wide bandgap metal insulator semiconductor (MIS) technology is development of high-quality gate dielectric layers. Systems & Processes Engineering Corporation (SPEC), in collaboration with the University of Texas at Austin, proposes to use deposited silicon nitride as the dielectric gate layer for wide bandgap semiconductor devices. During Phase I of the program, SPEC will deposit Si3N4 on SiC substrates and determine the electrical properties of the resultant dielectric layer such as the amount of charge the gate can control and compare the results to a standard silicon dioxide gate layer on SiC. Phase II of the program will optimize the dielectric deposition method, use this method to deposit the dielectric gate layer on SiC devices, and demonstrate improved performance of the device at temperatures over 400Â¿C using the new gate material.
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