Use of Si3N4 as the Dielectric Gate Layer for Wide Bandgap Semiconductor Devices

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$70,000.00
Award Year:
1997
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
36955
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Systems & Processes
401 Camp Craft Rd, Austin, TX, 78746
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr. Keith Jamison
(512) 306-1100
Business Contact:
() -
Research Institution:
n/a
Abstract
One of the most important problems to overcome for the development of wide bandgap metal insulator semiconductor (MIS) technology is development of high-quality gate dielectric layers. Systems & Processes Engineering Corporation (SPEC), in collaboration with the University of Texas at Austin, proposes to use deposited silicon nitride as the dielectric gate layer for wide bandgap semiconductor devices. During Phase I of the program, SPEC will deposit Si3N4 on SiC substrates and determine the electrical properties of the resultant dielectric layer such as the amount of charge the gate can control and compare the results to a standard silicon dioxide gate layer on SiC. Phase II of the program will optimize the dielectric deposition method, use this method to deposit the dielectric gate layer on SiC devices, and demonstrate improved performance of the device at temperatures over 400¿C using the new gate material.

* information listed above is at the time of submission.

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