Non-contact lithography based on optical superlensing at 193 nm

Award Information
Agency:
Department of Defense
Branch:
Defense Advanced Research Projects Agency
Amount:
$98,979.00
Award Year:
2008
Program:
SBIR
Phase:
Phase I
Contract:
W31P4Q-08-C-0188
Agency Tracking Number:
07SB2-0421
Solicitation Year:
2007
Solicitation Topic Code:
SB072-028
Solicitation Number:
2007.2
Small Business Information
TANNER RESEARCH, INC.
825 S. Myrtle Ave., Monrovia, CA, 91016
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
195754056
Principal Investigator
 Ravi Verma
 Scientist
 (626) 471-9700
 ravi.verma@tanner.com
Business Contact
 Kevin Dinniene
Title: Controller
Phone: (626) 471-9778
Email: kevin@tanner.com
Research Institution
N/A
Abstract
We are proposing the development of a “negative-index” material at 193 nm for use as a “superlens” for high resolution lithography. Superlensing has already been demonstrated at 365 nm, and this work will simply extend the demonstrated principles to 193 nm with a new set of materials.In Phase I, we will demonstrate this superlens with 30 nm half-pitch features, while restricting ourselves to a contact mask. In Phase II, we will extend the scheme to non-contact lithography based on superlensing at 193 nm.

* information listed above is at the time of submission.

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